20208-EC-026 I understand potential barrier, Diode equation ID is a current diode the current is due to minority carriers called reverse saturation current the current may not applied voltage more information sir
20208-EC-026 VI characteristics of diode in reverse bias, reverse bias-open switch-off condition, forward bias-close switch-ON condition, reverse breakdown sir
20208-EC-026 avalanche breakdown, difference between zener and avalanche breakdown, specifications of diode, zenerdiode, application of diode and zener diode, formation of a transistor sir
20208-EC-026 circuit symbols of transistor, transistor Biasing, Forward bias to forward bias-saturation, Reverse bias to Reverse bias-cut off, Forward bias to reverse bias-active region, reverse bias to forward bias- Inverse region , working of PNP transistor working of NPN transistor sir
20208-EC-026 transistor Confriguation (CB,CE, CC) common base(CB)Emitter input currentIe, input voltage Vb and collector output current Ic, output voltage Vcband Common emitter (CE) Baes input current Ib and input voltage vbe and collector output current Ic, output voltage Vce Common collector Base input current Ib, input voltage vbc and Emitter output current Ie, output voltage Vec andi
Input characteristics of transistor in CE Confriguation, output characteristics of transistor in CB Confriguation sir
20208-EC-026 output characteristics of transistor connected in CB Confriguation Common base transistor used for the voltage amplification Ability to the amplify voltage but not current. Input characteristics of transistor connected CB Confriguation. Input and output characteristics of a transistor connected in common collector Confriguation. Sir
20208-EC-026 I understand clearly the concept of Definition of Alpha, Beta, Gamma factors Alpha, beta, Gamma is a current application factors, Common base alpha ∆Ic/∆Ie vcb is constant Common Emitter beta ∆Vc/Vb vce constant Common collector gamma ∆Ie/∆Ib Relation between Alpha, beta, gamma CB Alpha ∆Ic/∆IE CE beta ∆Ic/IB CC gamma ∆IE/IB Expression collector current sir
20208-EC-026 I understand clearly comparison of transistor Confriguation input resistance: the input resistance ratio of change voltage and change current Output resistance: the output resistance ratio of change voltage and change in current Input resistance:Rinput=∆Vin/∆in Output resistance: Rout=∆Vout/∆Iout Transistor as a switch Saturation region acts closed switch as on condition Transistor is cut-off region open switch off condition sir
20208-EC-026 I understand clearly the concept of principle of operation of N channel JFETbVGs=0, vDs is applied (vDs>0) , the voltage at which drain current (ID) becomes constant is called pitch off voltage Working of N channel JFET sir
20208-EC-031, I understand the videos 10 to 30 all clear but sir not submitted in worksheet because my mobile was broken so on this I submitted in worksheet
20208-EC-026 I understand clearly the concept of Advantage of JFET over BJT low noise, long time, long life, higher power gain, better thermal stability Definition of parameters of JFET and relation among them Drain resistance rd=∆DS/∆ID and vgs constant Drain characteristics the curve drawn between drain current ID drain source voltage constant source voltage is known as drain characteristics The voltage drain current ID constant is called pitch off voltage Increase knee voltage drain current ID varies linearly increment of vDS this region is called ohmic region sir
20208-EC-026 I understand clearly the concept of mutual characteristics The curve drawn between drain current ID and gate source voltage vGS at constant drain source voltage is known mutual characteristics Construction of N channel MOSFET The surface between source and drain terminal is deposited with metal this region is called IGFET( insulated gate field effect transistor MOSFET circuit symbol, working ofN channel MOSFET, maximum drain current at pitch off voltage. After the pitch off voltage the VDS increase but drain current ID remains constant the region after pitch off voltage is called pitch off region N channel enhancement MOSFET sir
20208-EC-026 I understand clearly the concept of N Channel Depletion MOSFET. Surface between the source and drain terminal deposited the metal this region called ohmic region. Comparison of JFET and MOSFET. JFET:input impedance is high MOSFET:input impedance is very high JFET:gate leakage is high MOSFET:gate leakage is very less
20208-EC-026 I understand clearly the concept of Half wave Rectifier. The diode is On condition-forward bias. The diode is Off condition-reverse bias. Full wave center tapped rectifier. Sir
20208-EC-026 I understand clearly the concept of positive half Cycle terimalA becomes positive, terminal B ❎Ne diode D1 and D3 on condition and diode D2, D4 off condicondition con
20208-EC-026 I understand clearly the concept of full wave rectifier, both positive and negative half cycle input, the current flow resistor in same direction sir
20208-EC-026 I understand clearly the concept of full wave rectifier both positive and negative half cycle of input, the current flow load resistor in same direction sir
20208-EC-026 I understand clearly the concept RMS, average current value of rectifier, half wave rectifier. Average voltage v average=Vm/π, current Iaverage=I'm/π. Ripple factor:ripple factor is defined ratio of RMS value actually voltage/ current (input) and Dc voltage current (output) rectifier. Sir
20208-EC-26 I understand clearly the concept rectifier efficiency:the ratio of DC output power to the Ac input power of a rectifier is called efficiency. Comparison of rectifier. Number of diode s half wave:1, full wave center tapped rectifier:2, Bridge rectifier:4. Need of fliter, Half wave rectifier output and full wave rectifier output not DC combination of AC to DC sir
20208-EC-026 I understand clearly the concept RC filter, filter Reactance rippelcapacitor xc frequencies smaller thanR, xc=1/wc=1/2πfc CLC filter, CLC are almost called asπ CRC filter, difference between CLC and CRC filter place inductor, resistor. Swingingchoke swinging choke is a inductor, when current increase the inductor valu is decrease.
20208-EC-026 I understand clearly the concept need for a regulated power supply. Dc power supply which maintains the output voltage constant irrespective AC mains load variations is known regulated power supply Specification of a regulated power supply Stability factor, noise, output resistance, output voltage and current etc. Zener regulated DC power supply Limitations of zener regulated DC power supply sir
20208-EC-026 I understand clearly the concept of regulated power supply Regulated power supply -Dc voltage source, coarse, fine, minimum position anti clock wise direction, maximum position clock wise direction, current limiting nab.
20208-EC-026 public address system Sound-electric signal-amplifer- amplifier signal in loud speaker Two speaker resistance connected in series in-16 ohms, two speaker resistance in parallel in 4 ohms
There is no doubts in this lecture...I understood clearly
ReplyDeleteI am gain more information semiconductor physics no doubts in this topic fully calrifide
DeleteI understand clearly the concept vedioes in 50to54 sir
DeleteI am gain more information
ReplyDeleteThere is no doubts in this topic
ReplyDeleteI understood this lecture clearly
ReplyDeleteSir I understand clearly all vedioes but not submit in work sheet 1to39 vedioes this day submit in work sheet sir 20208-EC-o26
ReplyDelete20208-EC-026 I understand clearly the videos40to49 sir
ReplyDelete20208-EC-026 I understand clearly the videos40to49 sir
ReplyDelete20208-EC-026 I understand clearly the videos40to49 sir
ReplyDelete20208-EC-026I understand clearly Vedioes 50to70 sir not submit in worksheet this day submit in worksheet sir
ReplyDelete20208-EC-026 I am gain more information Intrinsic semiconductor,Extrinsic semiconductor, Pn junction Diode sir
ReplyDelete20208-EC-026PN junction diode forward bias few ohmsand reverse bias mega ohms gain more information sir
ReplyDelete20208-EC-026 I understand potential barrier, Diode equation ID is a current diode the current is due to minority carriers called reverse saturation current the current may not applied voltage more information sir
ReplyDelete20208-EC-026 VI characteristics of diode in reverse bias, reverse bias-open switch-off condition, forward bias-close switch-ON condition, reverse breakdown sir
ReplyDelete20208-EC-026 avalanche breakdown, difference between zener and avalanche breakdown, specifications of diode, zenerdiode, application of diode and zener diode, formation of a transistor sir
ReplyDeleteTransistor as three region, terimals is three, Jucation is two, collector areais large, base area is small, emitter area is small sir
Delete20208-EC-026 circuit symbols of transistor, transistor Biasing,
ReplyDeleteForward bias to forward bias-saturation, Reverse bias to Reverse bias-cut off, Forward bias to reverse bias-active region, reverse bias to forward bias- Inverse region , working of PNP transistor working of NPN transistor sir
20208-EC-026 transistor Confriguation (CB,CE, CC) common base(CB)Emitter input currentIe, input voltage Vb and collector output current Ic, output voltage Vcband
ReplyDeleteCommon emitter (CE) Baes input current Ib and input voltage vbe and collector output current Ic, output voltage Vce
Common collector Base input current Ib, input voltage vbc and Emitter output current Ie, output voltage Vec andi
Input characteristics of transistor in CE Confriguation, output characteristics of transistor in CB Confriguation sir
20208-EC-026 output characteristics of transistor connected in CB Confriguation
ReplyDeleteCommon base transistor used for the voltage amplification Ability to the amplify voltage but not current.
Input characteristics of transistor connected CB Confriguation.
Input and output characteristics of a transistor connected in common collector Confriguation. Sir
20208-EC-026 I understand clearly the concept of Definition of Alpha, Beta, Gamma factors
ReplyDeleteAlpha, beta, Gamma is a current application factors, Common base alpha ∆Ic/∆Ie vcb is constant
Common Emitter beta ∆Vc/Vb vce constant
Common collector gamma ∆Ie/∆Ib
Relation between Alpha, beta, gamma
CB Alpha ∆Ic/∆IE
CE beta ∆Ic/IB
CC gamma ∆IE/IB
Expression collector current sir
20208-EC-026 I understand clearly comparison of transistor Confriguation input resistance: the input resistance ratio of change voltage and change current
ReplyDeleteOutput resistance: the output resistance ratio of change voltage and change in current
Input resistance:Rinput=∆Vin/∆in
Output resistance: Rout=∆Vout/∆Iout
Transistor as a switch
Saturation region acts closed switch as on condition
Transistor is cut-off region open switch off condition sir
20208-EC-026 I understand clearly the concept of regulated power supply and Dc voltage using multimeter sir
ReplyDelete20208-EC-026 I understand clearly the concept of principle of operation of N channel JFETbVGs=0, vDs is applied (vDs>0) , the voltage at which drain current (ID) becomes constant is called pitch off voltage
ReplyDeleteWorking of N channel JFET sir
20208-EC-031, I understand the videos 10 to 30 all clear but sir not submitted in worksheet because my mobile was broken so on this I submitted in worksheet
ReplyDelete20208-EC-026 I understand clearly the concept of Advantage of JFET over BJT low noise, long time, long life, higher power gain, better thermal stability
ReplyDeleteDefinition of parameters of JFET and relation among them
Drain resistance rd=∆DS/∆ID and vgs constant
Drain characteristics the curve drawn between drain current ID drain source voltage constant source voltage is known as drain characteristics
The voltage drain current ID constant is called pitch off voltage
Increase knee voltage drain current ID varies linearly increment of vDS this region is called ohmic region sir
20208-EC-026 I understand clearly the concept of mutual characteristics
ReplyDeleteThe curve drawn between drain current ID and gate source voltage vGS at constant drain source voltage is known mutual characteristics
Construction of N channel MOSFET
The surface between source and drain terminal is deposited with metal this region is called IGFET( insulated gate field effect transistor
MOSFET circuit symbol, working ofN channel MOSFET, maximum drain current at pitch off voltage. After the pitch off voltage the VDS increase but drain current ID remains constant the region after pitch off voltage is called pitch off region
N channel enhancement MOSFET sir
20208-EC-026 I understand clearly the concept of N Channel Depletion MOSFET. Surface between the source and drain terminal deposited the metal this region called ohmic region.
ReplyDeleteComparison of JFET and MOSFET.
JFET:input impedance is high
MOSFET:input impedance is very high
JFET:gate leakage is high
MOSFET:gate leakage is very less
I understand every vidio
ReplyDelete20208-EC-026 I understand clearly the concepts sir
ReplyDelete20208-EC-026 I understand clearly the concept of Half wave Rectifier. The diode is On condition-forward bias. The diode is Off condition-reverse bias.
ReplyDeleteFull wave center tapped rectifier. Sir
I understand all concert s of the lessons
ReplyDelete20208-EC-026 I understand clearly the concept of positive half Cycle terimalA becomes positive, terminal B ❎Ne diode D1 and D3 on condition and diode D2, D4 off condicondition con
ReplyDelete20208-EC-026 I understand clearly the concept of full wave rectifier, both positive and negative half cycle input, the current flow resistor in same direction sir
ReplyDelete20208-EC-026 I understand clearly the concept of full wave rectifier both positive and negative half cycle of input, the current flow load resistor in same direction sir
ReplyDelete20208-EC-026 I understand clearly the concept RMS, average current value of rectifier, half wave rectifier. Average voltage v average=Vm/π, current Iaverage=I'm/π.
ReplyDeleteRipple factor:ripple factor is defined ratio of RMS value actually voltage/ current (input) and Dc voltage current (output) rectifier. Sir
20208-EC-26 I understand clearly the concept rectifier efficiency:the ratio of DC output power to the Ac input power of a rectifier is called efficiency.
ReplyDeleteComparison of rectifier. Number of diode s half wave:1, full wave center tapped rectifier:2, Bridge rectifier:4.
Need of fliter, Half wave rectifier output and full wave rectifier output not DC combination of AC to DC sir
20208-EC-026 I understand clearly the concept RC filter, filter Reactance rippelcapacitor xc frequencies smaller thanR, xc=1/wc=1/2πfc
ReplyDeleteCLC filter, CLC are almost called asπ
CRC filter, difference between CLC and CRC filter place inductor, resistor.
Swingingchoke swinging choke is a inductor, when current increase the inductor valu is decrease.
20208-EC-026 I understand clearly the concept need for a regulated power supply. Dc power supply which maintains the output voltage constant irrespective AC mains load variations is known regulated power supply
ReplyDeleteSpecification of a regulated power supply
Stability factor, noise, output resistance, output voltage and current etc.
Zener regulated DC power supply
Limitations of zener regulated DC power supply sir
Sir i can understand all the videos very clearly sir 31 to 40 videos
ReplyDeleteI understand this all videos very clearly sir
ReplyDeleteSir i can clearly understand the topics sir
ReplyDelete20208-EC-031 I can understand the all video s very clearly sir
ReplyDelete20208-EC-031 sir i can understand the 81 to 85 videos very clearly in the lecture very clearly
ReplyDeleteI can understand very clearly 86 to 90 videos
ReplyDeleteSir i can understand 91 to 95 videos very clearly in this lecture s sir
ReplyDeleteI can understand the concept of 96 to 100 videos very clearly sir
ReplyDelete20208-EC-026 I understand clearly the concept of regulated power supply
ReplyDeleteRegulated power supply -Dc voltage source, coarse, fine, minimum position anti clock wise direction, maximum position clock wise direction, current limiting nab.
There is no doubt in this two video S sir
ReplyDelete20208-EC-026 public address system
ReplyDeleteSound-electric signal-amplifer- amplifier signal in loud speaker
Two speaker resistance connected in series in-16 ohms, two speaker resistance in parallel in 4 ohms
20208-EC-031 i can understand the experiment 8,9 and 18 very clearly sir
ReplyDelete20208-EC-031 i can understand the experiment 11,13 and 15 very clearly in this lecture sir
ReplyDeleteNo doubts in 2,3,4 experiment I can understand very clearly in this lecture s sir
ReplyDelete20208-EC-031 i can understand the experiment 17 very clearly
ReplyDelete20208-EC-031 i can understand the experiment s CRO and soldering very clearly
ReplyDelete20208-EC-031 i can understand the experiment s 3,6,18,19 very clearly sir
ReplyDelete20208-EC-031 i can understand the experiment s ( Vi characteristics of reverse bias and CRO very clearly in this lecture s sir
ReplyDelete